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Raytheon Co. reports it has landed $6 million to develop technology to improve the thermal performance of advanced defense electronics systems.
Under the deal from the Defense Advanced Research Projects Agency, Raytheon (NYSE: RTN) will develop nanothermal interface materials intended to reduce thermal resistance between interface layers found in electronic assemblies.
The three phase contract is designed to last for 45 months. Work on the contract will be performed at Raytheon Integrated Defense Systems’ Integrated Air Defense Center in Andover and at its Surveillance and Sensors Center in Sudbury.
Raytheon IDS has partnered with researchers from Purdue University and the Georgia Institute of Technology to develop the engineered nanomaterials necessary for the project.
In March, Raytheon brought in a $24 million deal from DARPA for semiconductor development. Under that deal, also three phases, the defense giant will perform work on DARPA’s wide bandgap semiconductor development program at Raytheon IDS’ Andover and Sudbury sites.
DARPA is collaborating on the 38-month Raytheon contract with the U.S. Missile Defense Agency to develop gallium nitride as a semiconductor for missile defense radars.
Raytheon IDS is a subsidiary of Waltham-based Raytheon. Raytheon, with 72,000 employees, reported a 2008 net income of $1.7 billion on revenue of $23.2 billion.
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