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Raytheon Co. reports it has landed $23.9 million from the U.S. Defense Advanced Research Projects Agency for semiconductor development.
Under the Phase 3 deal, the defense giant will perform work on DARPA’s wide bandgap semiconductor development program.
DARPA is collaborating on the 38-month Raytheon contract with the U.S. Missile Defense Agency to develop gallium nitride as a semiconductor for missile defense radars.
Work under this contract will be performed by Raytheon Integrated Defense Systems at its Integrated Air Defense Center in Andover and its Surveillance and Sensors Center in Sudbury.
Earlier this month, Raytheon landed a Phase 2 contract from the U.S. Department of Defense Joint Non-Lethal Weapons Program to develop gallium nitride as a solid-state semiconductor for use in the non-lethal active denial weapon system, a truck-mounted weapon that uses microwaves to create a heating sensation on the surface of the skin.
Waltham-based Raytheon, with 72,000 employees, reported a 2008 net income of $1.7 billion on revenue of $23.2 billion.
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